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Nanoelectronics: Towards End of Scaling and Beyond

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WHEN: 26 February, 2024

LOCATION: Online

TIMEZONE: AEDT


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Abstract

This seminar is divided into two parts: In the first part, some general trends in nanoscale silicon-based CMOS technology will be briefly reviewed. As one of the examples of the industrial effort on pushing forward ultra-scalable IC technology, research on non-conventional transistor structure will be reflected with the focus on “three-dimensional” FinFET.

In the second part of the seminar, the role of emerging nanostructures and nano-devices in the “post-silicon” era will be discussed. Graphene has received significant interests from academia and industry lab, attributed to its distinctive layered configuration, band structure, and quantum phenomena. The atomically-thin sheets could be potentially grown by conventional thin-film techniques. While graphene has been explored as both active and passive elements in future electronics, its gap-less nature implies fundamental limits that promote innovations in device principle.

This seminar will introduce research results in prototype demonstrations of logic switches, non-volatile memories, interconnects, and sensors on emerging two-dimensional nanostructures. Major challenges and near-future research opportunities will be highlighted.

Biography

Prof. Yu received a Ph.D. degree in Electrical Engineering from the University of California at Berkeley.

A Distinguished Professor at Zhejiang University, his research interests are in the field of nanoelectronics. Specific interests include neuromorphic computing, post-Moore devices, and other emerging technology.

Prof Yu has authored/co-authored more than 300 research papers, and was the speaker of 150+ invited talks to conferences, societies, universities, and industry around the world.

As one of the prolific inventors in semiconductor electronics, he has more than 300 awarded U.S. patents. Dr. Yu has served on the invited panels and advisory/organising/technical program committees of many international conferences.

He has been an editor of IEEE Electron Devices Letters and Nano-Micro Letters, associated editor of IEEE Transactions on Nanotechnology, and Guest Editor of IEEE transactions on Electron Devices and IEEE transactions on Nanotechnology.

Dr Yu is a fellow of IEEE, a fellow of the National Academy of Inventors (NAI), and an IEEE Distinguished Lecturer of the Electron Devices Society.


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